DocumentCode :
2432785
Title :
Design of on-chip power-rail ESD clamp circuit with ultra-small capacitance to detect ESD transition
Author :
Chen, Shih-Hung ; Ker, Ming-Dou
Author_Institution :
Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear :
2009
fDate :
28-30 April 2009
Firstpage :
327
Lastpage :
330
Abstract :
A power-rail ESD clamp circuit with a new proposed ESD-transient detection circuit which adopts a ultra small capacitor to achieve the required functions has been presented and substantiated to own a long turn-on duration and high turn-on efficiency. In addition, the power-rail ESD clamp circuits with the new proposed ESD-transient detection circuit also presented an excellent immunity against the mis-trigger and the latch-on event under the fast power-on condition.
Keywords :
CMOS integrated circuits; capacitance; detector circuits; electrostatic discharge; ESD transition; fast power-on condition; on-chip power-rail ESD clamp circuit; ultra-small capacitance; CMOS technology; Capacitance; Clamps; Electrostatic discharge; Feedback circuits; Industrial electronics; Integrated circuit technology; MOSFETs; Protection; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation and Test, 2009. VLSI-DAT '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2781-9
Electronic_ISBN :
978-1-4244-2782-6
Type :
conf
DOI :
10.1109/VDAT.2009.5158161
Filename :
5158161
Link To Document :
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