Title :
Program, erase and retention times of thin-oxide Flash-EEPROMs
Author :
Iannaccone, G. ; Gennai, S.
Author_Institution :
Dipt. di Ingegneria dell´´Inf., Univ. degli studi di Pisa, Italy
Abstract :
The purpose of this work is the simulation of program, erase, and retention times of thin-oxide Flash EEPROMs, in which the floating gate is charged through Fowler-Nordheim (FN) or direct tunneling.
Keywords :
flash memories; tunnelling; Fowler-Nordheim tunneling; computer simulation; direct tunneling; erase time; floating gate; program time; retention time; thin oxide flash EEPROM; Design optimization; Doping; EPROM; Electronic mail; Flash memory; Nonvolatile memory; Potential well; Threshold voltage; Tunneling; Voltage control;
Conference_Titel :
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location :
Glasgow, UK
Print_ISBN :
0-85261-704-6
DOI :
10.1109/IWCE.2000.869971
