Scaling of pHEMTs to decanano dimensions

Although the research in ultrafast compound FETs today is focused mainly on high In channel devices on InP substrates and strain relief buffers, significant performance improvement can be gained by proper scaling of the conventional pseudomorphic HEMT (pHEMT) with low In content channel. We investigate the scaling performance of pHEMTs to deep decanano dimensions. This is the first phase of a large (#2.6M) experimental programme in Glasgow aiming to establish Roadmap benchmarks for high-speed III-V devices. The finite element Monte Carlo device simulator (MC/H2F) has been used to simulate electron transport properties for a set of pHEMTs, fully scaled in both lateral and vertical direction with gate lengths of 120, 70, 50, and 30 nm.