Title :
Isothermal grain growth of CdTe in CdCl2 and Te fluxes [solar cells]
Author :
Hiie, J. ; Altosaar, M. ; Mellikov, E. ; Madasson, J. ; Sapogova, J. ; Mikli, V.
Author_Institution :
Dept. of Semicond. Mater. Technol., Tallinn Tech. Univ., Estonia
fDate :
29 Sep-3 Oct 1997
Abstract :
The mechanism of isothermal recrystallization of CdTe powder in liquid CdCl2 and Te was studied and the possibility to grow CdTe monograin powders was shown. Te was found to act as an effective flux similarly to CdCl2 guaranteeing high growth rate for CdTe grains. At lower annealing temperatures (500-650°C) primary crystals grow mainly by deposition of material from saturated solution onto smooth crystal surfaces. In higher temperature region (700-800°C) there occurs remarkable sintering of particles and grains lose their round shape. Te in CdCl2 flux was found to reduce the formation of aggregates and to increase the rate of crystal growth
Keywords :
II-VI semiconductors; annealing; cadmium compounds; grain growth; recrystallisation; semiconductor device testing; sintering; solar cells; 500 to 650 C; 700 to 800 C; CdCl2; CdTe; CdTe solar cells; Te; aggregates formation; annealing temperature; crystal growth rate; isothermal grain growth; isothermal recrystallization; monograin powder growth; sintering; Annealing; Crystalline materials; Crystallization; Crystals; Isothermal processes; Powders; Semiconductor materials; Shape; Tellurium; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654126
