Title :
Simulation of 0.35 /spl mu/m/0.25 /spl mu/m CMOS technology doping profiles
Author :
Lorenzini, M. ; Haspeslagh, L. ; Van Houdt, J. ; Maes, H.E.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
In this work, by taking into account a number of recent models, concentration-depth profiles from two different technologies have been successfully reproduced by using the TSUPREM-4 process simulator with a unique set of fitting parameters. At first, boron and phosphorous channel profiles, as well as source/drain n/sup +/ profiles, have been simulated for a 0.35 /spl mu/m CMOS technology with a calibrated version of the simulator. Next, this version has been successfully checked by simulating profiles of the same dopant species for a 0.25 /spl mu/m CMOS technology.
Keywords :
CMOS integrated circuits; doping profiles; integrated circuit technology; semiconductor process modelling; 0.25 micron; 0.35 micron; CMOS technology; Si:B; Si:P; TSUPREM-4 process simulation; doping profile; Annealing; Boron; CMOS technology; Doping profiles; Materials science and technology; Physics; Semiconductor device modeling; Semiconductor process modeling; Silicon; Voltage;
Conference_Titel :
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location :
Glasgow, UK
Print_ISBN :
0-85261-704-6
DOI :
10.1109/IWCE.2000.869978
