Current-voltage modeling of Bilayer Graphene Nanoribbon Schottky Diode

This paper is all about the current-voltage modeling of Bilayer Graphene Nanoribbons (BGNRs) Schottky Diode. The metal semiconductor devices were used in the beginning of the year 1900s. We can make a point contact diode by touching a metallic whisker to an exposed semi-conductor surface. The metal semiconductor diodes were replaced by the p-n junction in the 1950´s because they were not easily reproduced or found to be mechanically reliable. As a result the practicability of making use of the semiconductor and vacuum technology to construct reproducible and dependable metal semiconductor contacts. Therefore, a high consideration occurs for the schottky barrier diode or metal semiconductor rectifying contact. A model to evaluate or design the current-voltage (I-V) characteristics of BGNRs schottky diode as a function of physical parameters, such as GNR width (w), effective mass (m*), gate insulator thickness (t_ins), and electrical parameters, such as schottky barrier (SB) height (φ_SB) are presented in this paper.