Title :
The oxidation of copper-indium diselenide surfaces
Author_Institution :
Dept. of Energy Dev., Companhia Energetica de Minas Gerais, Belo Horizonte, Brazil
fDate :
29 Sep-3 Oct 1997
Abstract :
The mechanisms, chemistry, structure and interface properties of native and grown oxides on CuInSe2 are presented. During thermal oxidation of this ternary semiconductor, the composition and the electrical properties are controlled, primarily by the temperature and duration of oxidation treatment. The oxygen reacts principally with In, leaving the Cu and Se to readjust at the interface to form a Cux Se transition layer. The thermal oxide consists of an In2 O3 matrix and having either inclusion of Cu or SeO2 particles, depending on the precise formation conditions. The CuxSe transition layer eventually acts as a barrier that prevents further oxidation of the underlying CuInSe2
Keywords :
copper compounds; heat treatment; indium compounds; oxidation; ternary semiconductors; CuxSe transition layer; CuInSe2; CuInSe2 surface oxidation; In2O3 matrix; SeO2 particles; composition control; electrical properties control; formation conditions; grown oxides; heat treatment; interface properties; native oxides; ternary semiconductor; thermal oxidation; thermal oxide; Chemistry; Copper; Crystal microstructure; Heat treatment; Indium; Oxidation; Scanning electron microscopy; Surface treatment; Temperature distribution; Transmission electron microscopy;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654136
