A study on the performance evaluation of a CNT-OPAMP by variation of SWNTs in the CNFET-channel region

Author

Rahman, Fahim ; Zaidi, Asheque Mohammad ; Anam, Nadia ; Akter, Aysha ; Faiz, Rethwan

Author_Institution

Dept. of EEE, Bangladesh Univ. of Eng. & Technol. (BUET), Dhaka, Bangladesh

fYear

2011

fDate

28-30 Sept. 2011

Firstpage

278

Lastpage

281

Abstract

In this paper, a CNT-OPAMP has been designed using an eight-transistor OPAMP benchmark model and the performance of the OPAMP has been examined with the variation of the number of SWNTs used in the channel region of the CNTFETs. A simulation based assessment of the effect of increased nanotubes in the channel region is done, showing a gradual improvement in all the characteristic performance parameters of the CNT-OPAMP in comparison to conventional Si-based CMOS-OPAMP. A drastic improvement in bandwidth by 146% and a reduction in power consumption by 327.22% has been achieved for a five-tube CNFET based CNT-OPAMP suggesting CNT-OPAMP as a more suitable device for analog and mixed-signal operations in future nanoscale circuits.

Keywords

analogue circuits; carbon nanotube field effect transistors; carbon nanotubes; nanoelectronics; operational amplifiers; C; CNFET-channel region; CNT-OPAMP; CNTFET channel region; SWNT; analog signal operation; carbon nanotube; eight-transistor OPAMP benchmark model; mixed-signal operation; nanoscale circuits; nanotubes; power consumption; Bandwidth; CNTFETs; Carbon nanotubes; Integrated circuit modeling; Nanoscale devices; Performance evaluation;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro and Nanoelectronics (RSM), 2011 IEEE Regional Symposium on

Conference_Location

Kota Kinabalu

Print_ISBN

978-1-61284-844-0

Type

conf

DOI

10.1109/RSM.2011.6088343

Filename

6088343