Title :
A 2-18 GHz monolithic variable attenuator using novel triple-gate MESFETs
Author :
Sun, H.J. ; Ewan, J.
Author_Institution :
Teledyne Monolithic Microwave, Mountain View, CA, USA
Abstract :
A monolithic variable attenuator requiring only a single positive external bias/drive voltage and capable of handling 0.4-W input power has been developed using novel triple-gate MESFETs. The IC exhibits greater than 13-dB attenuation and less than 2:1 VSWR (voltage standing wave ratio) from 2-18 GHz with a maximum insertion loss of 2.7 dB at 18 GHz. It was developed from a lower-power, single-gate version using a unique scaling approach that preserves the circuit electrical property while enhancing the power handling almost ninefold.<>
Keywords :
MMIC; Schottky gate field effect transistors; attenuators; field effect integrated circuits; 0.4 W; 2 to 18 GHz; 2.7 dB; MMIC; SHF; microwave IC; monolithic variable attenuator; single positive external bias/drive voltage; triple-gate MESFETs; Attenuation; Attenuators; Bandwidth; Broadband amplifiers; Circuits; FETs; Frequency; MESFETs; Temperature; Voltage control;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99695
