Title :
Ruthenium thin film growth under low temperature pulsed CVD conditions Using carbonyl-diene precursor
Author :
Vasilyev, Vladislav Yu
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
Abstract :
This paper is devoted to the investigation of the ruthenium films, chemically vapor deposited under low temperature and sequentially pulsed gas injection conditions. Experimental results presented and published in 2006-2008 have been briefly consolidated. This paper can be interesting to those working in modern precision technologies as well as postgraduate students.
Keywords :
atomic layer deposition; chemical vapour deposition; metallic thin films; ruthenium; Ru; atomic layer deposition; carbonyl-diene precursor; chemical vapor deposition; film morphology; low temperature pulsed CVD; ruthenium thin film growth; sequentially pulsed gas injection conditions; Atherosclerosis; Chemical technology; Chemical vapor deposition; Conducting materials; Plasma temperature; Rough surfaces; Sputtering; Surface morphology; Surface roughness; Transistors; Ruthenium; carbonyl-diene precursor; pulsed chemical vapor deposition;
Conference_Titel :
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-5534-8
DOI :
10.1109/INTERNANO.2009.5335628
