A temperature-compensated linearizing technique for MMIC attenuators utilizing GaAs MESFETs as voltage-variable resistors

Author

Fisher, D.A. ; Dobkin, D.M.

Author_Institution

Watkins-Johnson Co., Palo Alto, CA, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

781

Abstract

A linearizing technique that solves many of the problems associated with GaAs FET variable attenuators is demonstrated. The technique generates a linear attenuation versus control voltage curve that is stable over the -55 degrees C to +125 degrees C temperature range and is broadband, covering the DC to 20-GHz frequency band. In addition, the attenuator is compatible with FET amplifier design for MMIC (monolithic microwave integrated circuit) integration to achieve higher levels of functional integration.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; attenuators; compensation; field effect integrated circuits; gallium arsenide; -55 to 125 degC; 0 to 20 GHz; GaAs; MESFETs; MMIC attenuators; broadband operation; impedance matching circuit; monolithic microwave integrated circuit; temperature-compensated linearizing technique; voltage-variable resistors; wideband type; Attenuation; Attenuators; DC generators; Frequency; Gallium arsenide; MMICs; Microwave FETs; Temperature control; Temperature distribution; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99696

Filename

99696