DocumentCode :
2433616
Title :
An influence of polyelectrolyte layer on electrophysical properties of MIS structures
Author :
Gorin, Dmitry A. ; Yaschenok, Alexey M. ; Manturov, Alexey O. ; Klimov, Boris N.
Author_Institution :
Saratov State Univ., Saratov, Russia
fYear :
2009
fDate :
28-31 Oct. 2009
Firstpage :
50
Lastpage :
52
Abstract :
An influence of polyelectrolyte layers on electrophysical properties of structures metal-insulator-semiconductor (MIS) under its adsorption on the surface of single crystal silicon is shown. Deposition of polyelectrolyte layers on the surface of single crystal silicon leads to change of the resistance of MIS structure. Deposition of polyethylene imine lead to decreasing the resistance of structure whereas following deposition of polystyrene sodium sulfonate and increasing the number of adsorbed polyelectrolyte layers leads to increasing of resistance of MIS structure.
Keywords :
MIS structures; adsorbed layers; adsorption; electric resistance; elemental semiconductors; polymer electrolytes; silicon; MIS structures; Si; adsorbed polyelectrolyte layers; electrophysical properties; metal-insulator-semiconductor structure; polystyrene sodium sulfonate; resistance; Assembly; Contacts; Liquid crystal displays; Liquid crystals; Nanoscale devices; Nanostructures; Nonhomogeneous media; Silicon; Solid state circuits; Surface resistance; MIS structure; Polyelectrolyte layers; resistance; silicon; surface;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-5534-8
Type :
conf
DOI :
10.1109/INTERNANO.2009.5335636
Filename :
5335636
Link To Document :
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