DocumentCode :
2433672
Title :
Investigation of the details of silicon nanowhisker growth by Monte Carlo simulation
Author :
Nastovjak, Alla G. ; Neizvestny, Igor G. ; Shwartz, Nataliya L.
Author_Institution :
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fYear :
2009
fDate :
28-31 Oct. 2009
Firstpage :
47
Lastpage :
49
Abstract :
Silicon nanowhisker (NW) growth was investigated by Monte Carlo simulation. Dependence of NW growth rate on radius R was obtained. Growth rate was found to be proportional to 1/R2 for diffusion growth mode and radius independent for adsorption mode.
Keywords :
Monte Carlo methods; adsorption; diffusion; elemental semiconductors; nanofabrication; nanostructured materials; semiconductor growth; silicon; whiskers (crystal); Monte Carlo simulation; Si; adsorption mode; diffusion growth mode; silicon nanowhisker growth; Crystallization; Crystals; Gold; Mechanical factors; Molecular beam epitaxial growth; Monte Carlo methods; Nanobioscience; Seminars; Silicon; Substrates; Monte Carlo; Nanowhisker; simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-5534-8
Type :
conf
DOI :
10.1109/INTERNANO.2009.5335639
Filename :
5335639
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2433672
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