Title :
Identification of electrical model parameters by results of RTS numerical simulation
Author :
Abramov, Li ; Goncharenko, I.A. ; Korolev, A.V.
Author_Institution :
Belarussian State Univ. of Inf. & Radioelectron., Minsk, Byelorussia
Abstract :
Identification of electrical parameters by results of numerical simulation of resonant-tunneling structures (RTS) is proposed. The method is realized using the RTS simulator EC-RTS-NANODEV. The example of identification of resonant-tunneling diode (RTD) parameters is shown. A new numerical simulation model of RTS is also presented.
Keywords :
microwave devices; numerical analysis; parameter estimation; resonant tunnelling devices; semiconductor device models; EC-RTS-NANODEV simulator; RTD parameters; electrical model parameters; numerical simulation; parameter identification; resonant-tunneling diode parameters; resonant-tunneling structures; Helium; IEEE catalog; Indium tin oxide; Microwave technology; Numerical simulation; Organizing; Physics; Resonant tunneling devices;
Conference_Titel :
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location :
Crimea, Ukraine
Print_ISBN :
966-572-048-1
DOI :
10.1109/CRMICO.2000.1256165
