Title :
Bimodal distribution of drops and holes in indium epitaxy on GaAs(001) substrate
Author :
Lyamkina, Anna A. ; Dmitriev, Dmitriy V. ; Galitsyn, Yuri G. ; Moshchenko, Sergey P. ; Toropov, Alexander I.
Author_Institution :
Novosibirsk State Univ., Novosibirsk, Russia
Abstract :
The indium drops formation on GaAs as initial stage of droplet epitaxy was investigated. The drop density of 5middot107 cm-2 allows to produce low-density quantum dots. Well-defined bimodal character of height distribution is revealed. We suppose that additional nucleation centers appeared on the surface during indium deposition time. They are supposed to be surface defects caused by arsenic evaporation from GaAs. The time of defect appearing was estimated on the base of two dot groups volume difference.
Keywords :
drops; evaporation; indium; liquid metals; molecular beam epitaxial growth; nanostructured materials; nucleation; quantum dots; GaAs; GaAs(001) substrate; In; arsenic evaporation; bimodal character; bimodal distribution; drop density; hole distribution; indium drop formation; indium epitaxy; low-density quantum dots; molecular beam epitaxy; nanoholes; nucleation centers; surface defects; Atomic force microscopy; Epitaxial growth; Gallium arsenide; Image analysis; Indium; Molecular beam epitaxial growth; Quantum dots; Statistical distributions; Substrates; Surface morphology; Molecular beam epitaxy; distribution; droplet epitaxy; nanoholes;
Conference_Titel :
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-5534-8
DOI :
10.1109/INTERNANO.2009.5335647
