Anisotropy of galvanomagnetic phenomena in epitaxial films of ferroelectric semiconductor PbSnTe:In

Author

Klimov, Alexander E.

Author_Institution

Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia

fYear

2009

fDate

28-31 Oct. 2009

Firstpage

9

Lastpage

13

Abstract

Giant anisotropic change of current in constant magnet field is observed in films of narrow band semiconductor PbSnTe:In. This phenomenon is considered with regard for ferroelectric properties in terms of the theory of space-charge-limited currents.

Keywords

IV-VI semiconductors; ferroelectric semiconductors; ferroelectric thin films; galvanomagnetic effects; indium; lead compounds; narrow band gap semiconductors; semiconductor epitaxial layers; space charge; tin compounds; PbSnTe:In; constant magnet field; epitaxial films; ferroelectric semiconductor; galvanomagnetic phenomena; giant anisotropic changes; narrow band semiconductor; space-charge-limited currents; Anisotropic magnetoresistance; Conductivity; Ferroelectric films; Ferroelectric materials; Helium; Narrowband; Polarization; Semiconductor films; Temperature dependence; Tin; Ferroelectric materials; PbSnTe; injection currents;

fLanguage

English

Publisher

ieee

Conference_Titel

Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-5534-8

Type

conf

DOI

10.1109/INTERNANO.2009.5335649

Filename

5335649