Title :
Frequency opportunities of GaAs MDS-structures
Author :
Beletsky, N.I. ; Polyansky, N.E. ; Prokhorov, E.D. ; Semenov, Alexander V.
Author_Institution :
Kharkiv Nat. Univ., Ukraine
Abstract :
MDS-structures based on GaAs and carbon diamond-like films (CDLF) are experimentally investigated. Voltage-current and voltage-capacity characteristics are measured. The frequency band of such structures is calculated.
Keywords :
III-V semiconductors; MIS structures; characteristics measurement; gallium arsenide; semiconductor device measurement; GaAs-C; III-V semiconductors; MDS-structures; frequency band; voltage-capacity characteristics; voltage-current characteristics; Conductivity; Diamond-like carbon; Frequency; Gallium arsenide; IEEE catalog; Indium tin oxide; Organizing; Resistance heating; Telecommunications; Voltage;
Conference_Titel :
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location :
Crimea, Ukraine
Print_ISBN :
966-572-048-1
DOI :
10.1109/CRMICO.2000.1256168
