Title :
Effect of purity of the starting materials on the parameters of epitaxial GaAs, produced by MOCVD-method
Author :
Devyatykh, G.G. ; Moiseev, A.N. ; Chilyasov, A.V. ; Kotkov, A.P. ; Ivanov, V.A. ; Vasiliev, L.S.
Author_Institution :
Inst. of Chem. of High-Purity Substances, Acad. of Sci., Nizhny Novgorod, Russia
Abstract :
High-purity arsine and trimethylgallium are used to produce A/sup 3/B/sup 5/ epitaxial layers by MOCVD-method for application in microwave devices and in optoelectronics. The present work is aimed to investigate the effect of purity of the starting materials on the electrophysical parameters of epitaxial gallium arsenide, produced by MOCVD-method, as well as to develop the technology for the production of high-purity arsine and TMG.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; semiconductor epitaxial layers; semiconductor growth; GaAs; MOCVD growth; arsine; electrophysical parameters; gallium arsenide epitaxial layer; starting material purity; trimethylgallium; Bismuth; Chromium; Gallium arsenide; Helium; Independent component analysis; Iron; Microwave technology; Organizing; Purification; Zinc;
Conference_Titel :
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location :
Crimea, Ukraine
Print_ISBN :
966-572-048-1
DOI :
10.1109/CRMICO.2000.1256174
