Title :
QE(λ,VF) and I(VF) measurements on single and triple-junction a-Si:H solar cells
Author :
Woodyard, James R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wayne State Univ., Detroit, MI, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
QE(λ, VF) and I(VF) were measured on a-Si:H single and triple-junction junctions with an integrated instrumentation system that has been previously reported by the author (1996). The goal of the investigations is to develop techniques for characterizing cells under power-generating conditions that may be useful in understanding cell operation and optimizing cell designs. The measurements suggest that photodegradation, and the associated defect states, play on important role in QE(λ, VF) under dark and light bias conditions as VF approaches the maximum power point
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; p-n junctions; silicon; solar cells; voltage measurement; I(VF) measurements; QE(λ,VF) measurements; Si:H; associated defect states; dark bias conditions; forward-bias voltage; integrated instrumentation system; light bias conditions; maximum power point; photodegradation; quantum efficiency variation; single-junction a-Si:H solar cells; triple-junction a-Si:H solar cells; Computational modeling; Convolution; Current measurement; Instruments; NIST; Photovoltaic cells; Probes; Radiometry; Voltage; Wavelength measurement;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654176
