DocumentCode :
2434001
Title :
Influence of hydrogen on optical properties of LPCVD amorphous silicon films
Author :
Mroz, B. ; Moon, B.Y. ; Jang, J. ; Pietruszko, S.M.
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland
fYear :
1997
fDate :
29 Sep-3 Oct 1997
Firstpage :
671
Lastpage :
673
Abstract :
The dependence of different optical parameters such as refractive index (n), optical absorption coefficient (a), slope of Tauc plot (C), optical band gap (EG), dispersion energy (Ed), average excitation energy (E0), static refractive index (n 0) on hydrogen content is reported in this paper. It was found that these parameters significantly depend on hydrogen concentration in LPCVD amorphous silicon films
Keywords :
CVD coatings; amorphous semiconductors; chemical vapour deposition; elemental semiconductors; energy gap; hydrogen; refractive index; semiconductor thin films; silicon; LPCVD amorphous silicon films; Si:H; Tauc plot slope; a-Si:H thin films; average excitation energy; dispersion energy; hydrogen content; optical absorption coefficient; optical band gap; optical properties; refractive index; solar cells; static refractive index; Absorption; Amorphous materials; Amorphous silicon; Hydrogen; Optical films; Optical refraction; Optical variables control; Photonic band gap; Refractive index; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
ISSN :
0160-8371
Print_ISBN :
0-7803-3767-0
Type :
conf
DOI :
10.1109/PVSC.1997.654178
Filename :
654178
Link To Document :
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