DocumentCode :
2434006
Title :
Semiconductor planar resistors for ICs
Author :
Stovpovoy, M.A.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
fYear :
2000
fDate :
11-15 Sept. 2000
Firstpage :
448
Lastpage :
449
Abstract :
This work presents the results of the 4-18 GHz GaAs ICs planar resistors design and fabrication. It was shown that the contact resistance may be essential in the total resistor value. The calculation method, which has a good agreement with experimental data, is proposed.
Keywords :
III-V semiconductors; MMIC; contact resistance; gallium arsenide; resistors; 4 to 18 GHz; GaAs; GaAs IC; contact resistance; semiconductor planar resistor; Contact resistance; Fabrication; Frequency; Gallium arsenide; Gold; IEEE catalog; Lithography; Organizing; Physics; Resistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location :
Crimea, Ukraine
Print_ISBN :
966-572-048-1
Type :
conf
DOI :
10.1109/CRMICO.2000.1256177
Filename :
1256177
Link To Document :
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