Improved performance of thin-film silicon solar cells on graphite substrates

Author

Auer, R. ; Zettner, J. ; Krinke, J. ; Polisski, G. ; Hierl, Th. ; Hezel, R. ; Schulz, M. ; Strunk, H.P. ; Koch, F. ; Nikl, D. ; Campe, H.V.

Author_Institution

Inst. fur Solarenergieforschung GmbH, Hameln/Emmerthal, Germany

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

739

Lastpage

742

Abstract

Different physical properties of silicon thin-film layers deposited by chemical vapor deposition (CVD) on foreign substrates have been investigated. The electrical activity of crystal defects (grain boundaries, low-angle grain boundaries, and dislocations) which influence the quality of the layer system was investigated by high-resolution optical beam induced currents (OBIC) and electron beam induced currents (EBIC). Photoluminescence (PL) spectra indicate the existence of dislocations. Impurities like molybdenum (Mo) originating from the crystallization process were detected by deep level transient spectroscopy (DLTS). The boron profile at the p⁺/p boundary between the seed layer and the epitaxial layer has been characterized by spreading resistance. A p-n junction silicon thin-film solar cell yields a confirmed cell efficiency of 8.3%, latest results up to 11.0% are obtained

Keywords

CVD coatings; EBIC; OBIC; chemical vapour deposition; crystal defects; deep level transient spectroscopy; elemental semiconductors; p-n junctions; photoluminescence; semiconductor device testing; semiconductor thin films; silicon; solar cells; 11 percent; 8.3 percent; C; Si; Si thin-film solar cells; boron profile; chemical vapor deposition; crystal defects; crystallization process; deep level transient spectroscopy; dislocations; electrical activity; electron beam induced currents; epitaxial layer; grain boundaries; graphite substrates; high-resolution optical beam induced currents; impurities; low-angle grain boundaries; p-n junction; p⁺/p boundary; performance improvement; photoluminescence spectra; seed layer; Chemical vapor deposition; Crystallization; Electron beams; Grain boundaries; Optical beams; Photovoltaic cells; Semiconductor thin films; Silicon; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654195

Filename

654195