Title :
Si-homoepitaxy by electron cyclotron resonance CVD
Author :
Conrad, E. ; Elstner, L. ; Fuhs, W. ; Henrion, W. ; Muller, P. ; Selle, B. ; Zeimer, U.
Author_Institution :
Hahn-Meitner-Inst., Berlin, Germany
fDate :
29 Sep-3 Oct 1997
Abstract :
Low-temperature homoepitaxy of silicon has been achieved at T=450°C by using electron cyclotron resonance CVD (2.45 GHz, up to 1.5 kW). H2 and H2/Ar were used as excitation gases and either SiH4 or mixtures of SiH4 with PH 3/H2 or B2H6/H2 served as process gas. The epitaxial layers were grown with a thickness of up to 3 μm at a rate of up to 25 nm/min. Highly phosphorus-doped epitaxial layers were used as emitters in 2×2 cm2 solar cell structures on p-type FZ- and SILSO-wafers as base material. These cells had AM1.5 efficiencies of up to 15% and 11%, respectively. The results suggest that recombination at the base-emitter interface is a limiting factor
Keywords :
cyclotron resonance; elemental semiconductors; phosphorus; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; silicon; solar cells; vapour phase epitaxial growth; 1.5 kW; 11 percent; 15 percent; 2 cm; 2.45 GHz; 3 mum; 450 C; AM1.5 efficiencies; B2H6-H2; B2H6/H2; H2; H2 excitation gas; H2-Ar; H2/Ar excitation gas; PH3-H2; PH3/H2; SILSO-wafers; Si; Si-homoepitaxy; SiH4; base-emitter interface recombination; electron cyclotron resonance CVD; emitters; epitaxial layers growth; low-temperature homoepitaxy; p-type FZ-wafers; phosphorus-doped epitaxial layers; process gas; solar cell structures; Cyclotrons; Dielectric substrates; Electrons; Epitaxial layers; Optical films; Photovoltaic cells; Plasma temperature; Resonance; Semiconductor epitaxial layers; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654199
