Title :
Thin, substrate-based crystalline silicon solar cells with no grid shading
Author :
Aiken, Daniel J. ; Barnett, Allen M.
Author_Institution :
Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
Two major opportunities for increasing the performance of present day silicon solar cells involve reducing both the thickness and the grid shading. The ideal silicon photovoltaic device will be 20-100 μm thick, will incorporate light trapping, and will not be shaded by contact metallization. Practicality also requires that these devices be supported by a low cost substrate. For the first time, a thin, substrate-based crystalline silicon solar cell has been designed and fabricated with no grid shading. Contacts are sandwiched between a supportive silicon substrate and a 40 μm thick active silicon device layer. Device results include a 535 mV Voc, and negligible shunt conductance and series resistance
Keywords :
elemental semiconductors; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; silicon; solar cells; substrates; 40 mum; 535 mV; Si; active silicon device layer; epitaxial layers; light trapping; liquid phase epitaxy; low cost substrate; performance improvement; substrate-based crystalline silicon solar cells; thin Si solar cells; Absorption; Costs; Crystalline materials; Crystallization; Metallization; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654201