MOSFET switching behaviour under influence of PCB stray inductance

Author

Teulings, W. ; Schanen, J.L. ; Roudet, J.

Author_Institution

Lab. d´´Electrotech., CNRS, Grenoble, France

Volume

3

fYear

1996

fDate

6-10 Oct 1996

Firstpage

1449

Abstract

An analytical expression is derived for the power MOSFET turn-off overvoltage, including the influence of PCB interconnects. The entire PCB is modeled by means of the partial element equivalent circuit (PEEC) method. The PCB model associated with a simple MOSFET model permits computation of maximum overvoltage with good precision. This expression can be used to design PCBs and choose a type of MOSFET respecting MOSFET maximum voltage ratings. The analytical expression has been verified by breadboard experiments

Keywords

equivalent circuits; field effect transistor switches; inductance; overvoltage; power MOSFET; printed circuits; semiconductor device models; MOSFET switching behaviour; PCB interconnects; PCB stray inductance; breadboard experiments; maximum overvoltage computation; partial element equivalent circuit method; power MOSFET turn-off overvoltage; Choppers; Diodes; Equivalent circuits; Inductance; Integrated circuit interconnections; MOSFET circuits; Parasitic capacitance; Power MOSFET; Switched-mode power supply; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE

Conference_Location

San Diego, CA

ISSN

0197-2618

Print_ISBN

0-7803-3544-9

Type

conf

DOI

10.1109/IAS.1996.559257

Filename

559257