Title :
MOSFET switching behaviour under influence of PCB stray inductance
Author :
Teulings, W. ; Schanen, J.L. ; Roudet, J.
Author_Institution :
Lab. d´´Electrotech., CNRS, Grenoble, France
Abstract :
An analytical expression is derived for the power MOSFET turn-off overvoltage, including the influence of PCB interconnects. The entire PCB is modeled by means of the partial element equivalent circuit (PEEC) method. The PCB model associated with a simple MOSFET model permits computation of maximum overvoltage with good precision. This expression can be used to design PCBs and choose a type of MOSFET respecting MOSFET maximum voltage ratings. The analytical expression has been verified by breadboard experiments
Keywords :
equivalent circuits; field effect transistor switches; inductance; overvoltage; power MOSFET; printed circuits; semiconductor device models; MOSFET switching behaviour; PCB interconnects; PCB stray inductance; breadboard experiments; maximum overvoltage computation; partial element equivalent circuit method; power MOSFET turn-off overvoltage; Choppers; Diodes; Equivalent circuits; Inductance; Integrated circuit interconnections; MOSFET circuits; Parasitic capacitance; Power MOSFET; Switched-mode power supply; Voltage control;
Conference_Titel :
Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-3544-9
DOI :
10.1109/IAS.1996.559257
