Title :
Properties of silicon thin films grown by the temperature difference method (TDM)
Author :
Thomas, B. ; Muller, G. ; Wilde, P.-M. ; Wawra, H.
Author_Institution :
Inst. fur Kristallzuchtung, Berlin, Germany
fDate :
29 Sep-3 Oct 1997
Abstract :
In this paper we describe the temperature difference method (TDM) as a promising technology for the continuous growth of thin film silicon from the solution on large area polycrystalline substrates (10×10 cm2). The thermodynamic driving force of the layer growth by TDM is generated by a temperature gradient perpendicular to the substrate surface. Silicon thin films have been grown from In/Ga-solutions at 980°C. A temperature gradient of 10 K/cm allows a growth rate of 0.3 μm/min. Doping concentrations from 1016 to 2×1018 cm-3 are adjustable. Minority charge carrier life times of 5-10 μs were determined in 30 μm thick layers by TRMC (time resolved microwave conductivity) measurements. Additionally first growth results of Si-LPE on silicon seeded substrates are presented
Keywords :
carrier lifetime; elemental semiconductors; high-frequency effects; liquid phase epitaxial growth; minority carriers; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; silicon; solar cells; thermodynamics; 10 cm; 30 mum; 5 to 10 mus; 980 C; LPE; Si; doping concentrations; epitaxial layers; large area polycrystalline substrates; minority charge carrier life times; silicon thin film properties; temperature difference method; temperature gradient; thermodynamic driving force; thin film silicon growth; time resolved microwave conductivity measurements; Charge carriers; Conductivity; Doping; Semiconductor thin films; Silicon; Substrates; Temperature; Thermal force; Thermodynamics; Time division multiplexing;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654203
