DocumentCode :
2434747
Title :
An extended model of power losses in hard-switched IGBT-inverters
Author :
Blaabjerg, Frede ; Pedersen, John K. ; Sigurjónsson, Sigurdur ; Elkjær, Alexander
Author_Institution :
Inst. of Energy Technol., Aalborg Univ., Denmark
Volume :
3
fYear :
1996
fDate :
6-10 Oct 1996
Firstpage :
1454
Abstract :
This paper proposes a new improved method to describe the power losses in hard-switched IGBT-inverters. The method includes dependency of voltage, current and temperature which enables the user to simulate thermal effects very quickly. The model is used on both a PT and NPT IGBT-module including the free-wheeling diode. Methods to extract the perimeters to the models are proposed and they are verified by measurements and simulation. It is concluded that the proposed model can describe the losses in IGBT-inverters accurately and a tool for simulating thermal effects is obtained
Keywords :
PWM invertors; insulated gate bipolar transistors; losses; power semiconductor switches; semiconductor device models; NPT IGBT-module; PT IGBT-module; PWM voltage source inverter; current dependency; extended model; free-wheeling diode; hard-switched IGBT-inverters; power losses; temperature dependency; thermal effects simulation; voltage dependency; Circuit simulation; Energy conversion; Insulated gate bipolar transistors; Power electronics; Power semiconductor switches; Pulse width modulation inverters; Semiconductor device manufacture; Semiconductor diodes; Temperature dependence; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE
Conference_Location :
San Diego, CA
ISSN :
0197-2618
Print_ISBN :
0-7803-3544-9
Type :
conf
DOI :
10.1109/IAS.1996.559258
Filename :
559258
Link To Document :
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