An extended model of power losses in hard-switched IGBT-inverters

Author

Blaabjerg, Frede ; Pedersen, John K. ; Sigurjónsson, Sigurdur ; Elkjær, Alexander

Author_Institution

Inst. of Energy Technol., Aalborg Univ., Denmark

Volume

3

fYear

1996

fDate

6-10 Oct 1996

Firstpage

1454

Abstract

This paper proposes a new improved method to describe the power losses in hard-switched IGBT-inverters. The method includes dependency of voltage, current and temperature which enables the user to simulate thermal effects very quickly. The model is used on both a PT and NPT IGBT-module including the free-wheeling diode. Methods to extract the perimeters to the models are proposed and they are verified by measurements and simulation. It is concluded that the proposed model can describe the losses in IGBT-inverters accurately and a tool for simulating thermal effects is obtained

Keywords

PWM invertors; insulated gate bipolar transistors; losses; power semiconductor switches; semiconductor device models; NPT IGBT-module; PT IGBT-module; PWM voltage source inverter; current dependency; extended model; free-wheeling diode; hard-switched IGBT-inverters; power losses; temperature dependency; thermal effects simulation; voltage dependency; Circuit simulation; Energy conversion; Insulated gate bipolar transistors; Power electronics; Power semiconductor switches; Pulse width modulation inverters; Semiconductor device manufacture; Semiconductor diodes; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE

Conference_Location

San Diego, CA

ISSN

0197-2618

Print_ISBN

0-7803-3544-9

Type

conf

DOI

10.1109/IAS.1996.559258

Filename

559258