Simulation and experiment on relativistic Klystron Amplifier driven by strong input power

Author

Song, Wei ; Lin, Yuzheng ; Liu, Guozhi ; Zhang, Xiaowei ; Ding, Zhenjie ; Zhang, Yonghua ; Sun, Jun ; Hao, Qingsong

Author_Institution

Dept. of Eng. Phys., Tsinghua Univ., Beijing

fYear

2008

fDate

15-19 June 2008

Firstpage

1

Lastpage

1

Abstract

This paper presents proposes a method of improving the input power to inhibit parasitic oscillations. Particle-in-cell simulation results indicate that the relativistic klystron amplifier driven by strong input power is a potential device to attain high stability, high efficiency, wide bandwidth, and frequency and phase locking. An electron beam of 200 keV, 1k A is used in simulation. Under the condition of 5 MW external power feeding, about 0.9 kA modulation current is obtained with only one cavity. The output microwave power is 70 MW, with 5% bandwidth and 40% efficiency. The experiment is carried out at SPG200 accelerator, the typical diode voltage and current of which are 200kV and 1 kA, respectively. An S band klystron with peak power about 4 MW is used as inputs.

Keywords

klystrons; microwave amplifiers; S band; SPG200 accelerator; current 1 kA; electron beam; electron volt energy 200 keV; external power feeding; input power; modulation current; output microwave power; particle-in-cell simulation; phase locking; power 5 MW; power 70 MW; relativistic klystron amplifier; voltage 200 kV; Bandwidth; Diodes; Electron beams; Frequency; High power amplifiers; Klystrons; Microwave devices; Power amplifiers; Stability; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2008. ICOPS 2008. IEEE 35th International Conference on

Conference_Location

Karlsruhe

ISSN

0730-9244

Print_ISBN

978-1-4244-1929-6

Electronic_ISBN

0730-9244

Type

conf

DOI

10.1109/PLASMA.2008.4590666

Filename

4590666