Title :
Circuit hot carrier reliability simulation in advanced CMOS process technology development
Author :
Fang, Peng ; Li, Ping C. ; Yue, John T.
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
Abstract :
To establish the relation between circuit AC hot carrier (HC) degradation and DC testable parameters in early development stage of a deep submicron technology becomes the critical part of the process integration. DC Hot Carrier parameters, e.g. Idsat and Idlin, were found to be correlated to AC Ring Oscillator frequency degradation. The impact of crosstalk induced voltage overshoot to invertor hot carrier degradation was quantified by simulation. A set of designable parameters were used to ensure deep submicron technology hot carrier reliability
Keywords :
CMOS integrated circuits; circuit analysis computing; crosstalk; hot carriers; integrated circuit reliability; semiconductor process modelling; AC hot carrier degradation; CMOS circuit simulation; DC parameters; crosstalk; deep submicron technology; invertor; reliability; ring oscillator; voltage overshoot; CMOS process; CMOS technology; Circuit simulation; Circuit testing; Crosstalk; Degradation; Frequency; Hot carriers; Integrated circuit reliability; Ring oscillators;
Conference_Titel :
Integrated Reliability Workshop, 1994. Final Report., 1994 International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-1908-7
DOI :
10.1109/IRWS.1994.515830
