Title :
Evaluation of self-heating in SOI CMOS ULSI
Author :
Dallmann, Douglas A. ; Shenai, Krishna
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
SOI technology potentially offers numerous benefits over bulk silicon at deep submicron dimensions. However, the presence of a buried SiO2 layer causes self-heating to occur which can impair device performance. The effects of self-heating on SOI MOSFET performance are examined as device dimensions are scaled from 1.0 μm to 0.25 μm. Results show severe self-heating under static conditions which has implications for IC reliability issues
Keywords :
CMOS integrated circuits; ULSI; integrated circuit reliability; silicon-on-insulator; 0.25 to 1.0 micron; IC reliability; SOI CMOS ULSI; SOI MOSFET; Si-SiO2; buried SiO2 layer; deep submicron technology; self-heating; CMOS technology; Equations; Frequency; Heating; Isolation technology; Metallization; Silicon compounds; Temperature; Thermal conductivity; Ultra large scale integration;
Conference_Titel :
Integrated Reliability Workshop, 1994. Final Report., 1994 International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-1908-7
DOI :
10.1109/IRWS.1994.515832
