Title :
Multilayer MMIC using a 3 mu m*3-layer dielectric film structure
Author :
Tokumitsu, T. ; Hiraoka, T. ; Nakamoto, H. ; Takenaka, T.
Author_Institution :
ATR Opt. & Radio Commun. Res. Lab., Kyoto, Japan
Abstract :
Very small multilayer MMICs (monolithic microwave integrated circuits) using miniature microstrip lines on a thin dielectric film are described. Their configuration, loss characteristic, and dielectric materials (silicon oxynitride and polyinide) are discussed. Other effective thin-film transmission lines, line crossovers, and vertical connections are also discussed. Multiport Wilkinson dividers, 90 degrees and 180 degrees hybrids, and distributed amplifiers are implemented in an area of less than 1 mm/sup 2/.<>
Keywords :
MMIC; losses; microwave amplifiers; strip line components; 180 degrees hybrids; 3 micron; 90 degree hybrid; SiON; distributed amplifiers; line crossovers; loss characteristic; miniature microstrip lines; monolithic microwave integrated circuits; multilayer MMICs; multiport Wilkinson dividers; polyinide; thin dielectric film; thin-film transmission lines; three layer dielectric film structure; vertical connections; Dielectric films; Dielectric losses; Dielectric materials; Dielectric thin films; MMICs; Microstrip; Microwave integrated circuits; Monolithic integrated circuits; Nonhomogeneous media; Silicon;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99708
