• DocumentCode
    2435988
  • Title

    Antifuse reliability and link formation models

  • Author

    Iranmanesh, Ali ; Karpovich, Yakov ; Yoon, Sukyoon

  • Author_Institution
    Crosspoint Solutions Inc., Santa Clara, CA, USA
  • fYear
    1994
  • fDate
    16-19 Oct 1994
  • Firstpage
    90
  • Lastpage
    94
  • Abstract
    Antifuse devices have been used for a variety of programmable circuits, and their application for high-performance, high density FPGA products is dramatically increasing. Attractiveness of antifuse stems from its relative small size, low ON resistance, and low OFF capacitance. Even though antifuses are conceptually simple structures, their behavior is not well understood. This report attempt to shed light into the link formation and reliability of antifuses. According to the models presented, link formation during programming is caused by melting and solidification of a-Si and portions of the electrodes. Furthermore, link switch-off failure is shown to occur at fixed voltage range caused by link melting. These models can be extended to the other types of antifuses as well
  • Keywords
    electric fuses; field programmable gate arrays; integrated circuit modelling; integrated circuit reliability; FPGA; Si; a-Si; antifuse devices; failure; link formation models; melting; programmable circuits; reliability; solidification; Avalanche breakdown; Breakdown voltage; Capacitance; Conducting materials; Conductive films; Electrodes; Field programmable gate arrays; Integrated circuit interconnections; Programmable circuits; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop, 1994. Final Report., 1994 International
  • Conference_Location
    Lake Tahoe, CA
  • Print_ISBN
    0-7803-1908-7
  • Type

    conf

  • DOI
    10.1109/IRWS.1994.515833
  • Filename
    515833