DocumentCode :
2435988
Title :
Antifuse reliability and link formation models
Author :
Iranmanesh, Ali ; Karpovich, Yakov ; Yoon, Sukyoon
Author_Institution :
Crosspoint Solutions Inc., Santa Clara, CA, USA
fYear :
1994
fDate :
16-19 Oct 1994
Firstpage :
90
Lastpage :
94
Abstract :
Antifuse devices have been used for a variety of programmable circuits, and their application for high-performance, high density FPGA products is dramatically increasing. Attractiveness of antifuse stems from its relative small size, low ON resistance, and low OFF capacitance. Even though antifuses are conceptually simple structures, their behavior is not well understood. This report attempt to shed light into the link formation and reliability of antifuses. According to the models presented, link formation during programming is caused by melting and solidification of a-Si and portions of the electrodes. Furthermore, link switch-off failure is shown to occur at fixed voltage range caused by link melting. These models can be extended to the other types of antifuses as well
Keywords :
electric fuses; field programmable gate arrays; integrated circuit modelling; integrated circuit reliability; FPGA; Si; a-Si; antifuse devices; failure; link formation models; melting; programmable circuits; reliability; solidification; Avalanche breakdown; Breakdown voltage; Capacitance; Conducting materials; Conductive films; Electrodes; Field programmable gate arrays; Integrated circuit interconnections; Programmable circuits; Solid modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop, 1994. Final Report., 1994 International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-1908-7
Type :
conf
DOI :
10.1109/IRWS.1994.515833
Filename :
515833
Link To Document :
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