Title :
Monolithic power amplifier design
Author :
Balyko, A.K. ; Vasilyev, V.I. ; Klimova, A.V. ; Kuznetsova, I.V. ; Yusupova, N.I.
Author_Institution :
´Istok´ Fed. State-Owned Unitary Res. & Production Enterprise, Moscow, Russia
Abstract :
Computed parameters of nonlinear model for several specific FETs, circuit engineering and layout design of a three-stage monolithic power amplifier are presented.
Keywords :
Schottky gate field effect transistors; microwave power amplifiers; GaAs; Schottky gated FET; field effect transistor; microwave technology; three-stage monolithic power amplifier; Circuits; Design engineering; FETs; Frequency; Gallium arsenide; Helium; Organizing; Power amplifiers; Power engineering and energy; Power engineering computing;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158785
