• DocumentCode
    2436206
  • Title

    Monolithic power amplifier design

  • Author

    Balyko, A.K. ; Vasilyev, V.I. ; Klimova, A.V. ; Kuznetsova, I.V. ; Yusupova, N.I.

  • Author_Institution
    ´Istok´ Fed. State-Owned Unitary Res. & Production Enterprise, Moscow, Russia
  • fYear
    2003
  • fDate
    8-12 Sept. 2003
  • Firstpage
    175
  • Lastpage
    176
  • Abstract
    Computed parameters of nonlinear model for several specific FETs, circuit engineering and layout design of a three-stage monolithic power amplifier are presented.
  • Keywords
    Schottky gate field effect transistors; microwave power amplifiers; GaAs; Schottky gated FET; field effect transistor; microwave technology; three-stage monolithic power amplifier; Circuits; Design engineering; FETs; Frequency; Gallium arsenide; Helium; Organizing; Power amplifiers; Power engineering and energy; Power engineering computing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea, Ukraine
  • Print_ISBN
    966-7968-26-X
  • Type

    conf

  • DOI
    10.1109/CRMICO.2003.158785
  • Filename
    1256470
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2436206