DocumentCode :
2436252
Title :
Deposition of diamond-like carbon films using hollow cathode plasma source
Author :
Jiang, H.F. ; Tian, X.B. ; Yang, S.Q. ; Fu, Ran ; Chu, Paul K.
Author_Institution :
Sch. of Mater. Sci. & Eng., Harbin Inst. of Technol., Harbin
fYear :
2008
fDate :
15-19 June 2008
Firstpage :
1
Lastpage :
1
Abstract :
Diamond-like carbon (DLC) films are deposited on AISI 304 stainless steel substrates using hollow cathode chemical vapor deposition (CVD). The substrate bias voltage is varied from 0 to -200 V to investigate its effect on the structural and mechanical properties of the films. Raman spectra show the formation of the G (graphite) peak and D (disorder) peak in the films. X-ray photoelectron spectroscopy (XPS) data also confirm the existence of C=C (sp2) and C-C (sp3) bonds. Our experiments show that the sample bias has a critical influence on the thickness and hardness of the deposited films. The largest thickness (1700 nm) and the highest hardness (HV1099) are achieved at a bias voltage of -50 V. All the films show low friction coefficients and the sample treated at -200 V exhibits the lowest friction coefficient. The enhancement mechanism is also described.
Keywords :
Raman spectra; X-ray photoelectron spectra; diamond-like carbon; friction; hardness; plasma CVD; thin films; C; FeCCrJk; Raman spectra; X-ray photoelectron spectroscopy; diamond-like carbon films; friction coefficient; hardness; hollow cathode chemical vapor deposition; hollow cathode plasma source; size 1700 nm; substrate bias voltage; voltage 0 V to -200 V; Cathodes; Chemical technology; Composite materials; Diamond-like carbon; Friction; Materials science and technology; Plasma sources; Production; Voltage; Welding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2008. ICOPS 2008. IEEE 35th International Conference on
Conference_Location :
Karlsruhe
ISSN :
0730-9244
Print_ISBN :
978-1-4244-1929-6
Electronic_ISBN :
0730-9244
Type :
conf
DOI :
10.1109/PLASMA.2008.4590718
Filename :
4590718
Link To Document :
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