Title :
GaInP/GaAs cascade solar cells grown by molecular beam epitaxy
Author :
Lammasniemi, J. ; Kazantsev, A.B. ; Jaakkola, R. ; Toivonen, M. ; Jalonen, M. ; Aho, R. ; Pessa, M.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
fDate :
29 Sep-3 Oct 1997
Abstract :
First results for molecular beam epitaxy (MBE) grown Ga0.51 In0.49P/GaAs cascade solar cells are presented. The structures were prepared by both solid-source (SS) MBE and gas-source (GS) MBE. The tunnel diodes between the subcells were grown by using the standard MBE dopants (silicon and beryllium) but dopant diffusion related degradation of the cell characteristics was not observed. For the best SSMBE structure, a conversion efficiency of 21.1% was measured at AM0 for a 1×1 cm2 cell. For the GSMBE structures, the best AM0 conversion efficiency was 20.8% for a 2×2 cm2 device. In addition, the first MBE results for advanced Al0.51In0.49P/Ga0.51In0.49 P-based tunnel diodes are presented
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; solar cells; tunnel diodes; 1 cm; 2 cm; 20.8 percent; 21.1 percent; AM0 efficiency; Al0.51In0.49P/Ga0.51In0.49 P-based tunnel diodes; Al0.5In0.49P-Ga0.51In0.49 P; Ga0.51In0.49P-GaAs; Ga0.51In0.49P/GaAs cascade solar cells; GaInP/GaAs cascade solar cells; MBE dopants; beryllium dopant; conversion efficiency; dopant diffusion related degradation; gas-source MBE; molecular beam epitaxy; silicon dopant; solid-source MBE; tunnel diodes; Diodes; Epitaxial growth; Gallium arsenide; Inductors; MOCVD; Molecular beam epitaxial growth; Photovoltaic cells; Physics; Production; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654214
