DocumentCode
2436311
Title
High-speed MSM-photodetectors
Author
Averin, S.V. ; Sachot, R.
Author_Institution
Inst. of Radioelectron., Russian Acad. of Sci., Moscow, Russia
fYear
2003
fDate
8-12 Sept. 2003
Firstpage
189
Lastpage
190
Abstract
In this paper, we analyze the limitations imposed by reduced dimensions of planar photodiode structures. We show that a modified detector with heterobarrier and a diode structure with recessed contacts lead to reduced carrier sweep-out and better conversion efficiency.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; optical communication equipment; photodetectors; photodiodes; InP-GaAs; carrier sweep-out; heterobarrier structure; high-speed MSM-photodetector; metal-semiconductor-metal; modified detector; optical communication system; planar photodiode structure; Detectors; IEEE catalog; Indium phosphide; Optical fiber communication; Organizing; Photodetectors; Photodiodes; Photonics; Physics; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-26-X
Type
conf
DOI
10.1109/CRMICO.2003.158790
Filename
1256475
Link To Document