Title :
Automatic parameter extractor for nonlinear models of microwave MESFETs
Author :
Kishchinskiy, A.A. ; Svistov, Ye.A. ; Baranov, V.V. ; Polyakov, G.B.
Author_Institution :
Central Res. Inst. of Radio Eng., Fed. State-Owned Unitary Enterprise, Moscow, Russia
Abstract :
Results of developing an automated measuring bench for measuring and identifying parameters of nonlinear microwave GaAs MESFET models in the form of crystals are presented. Measuring techniques, data processing, equipment setup and features are discussed.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; automatic parameter extractor; data processing; metal-semiconductor field effect transistor; microwave GaAs MESFET; nonlinear parameters; HEMTs; Helium; IEEE catalog; MESFETs; MODFETs; Microwave technology; Modems; Organizing; Scattering parameters; Testing;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158797
