Title :
A novel trench gate LDMOS for RF applications
Author_Institution :
Fairchild Semicond. Discrete Power Technol. Group, San Jose, CA, USA
Abstract :
In this paper a novel trench gate lateral double diffused MOSFET (TG-LDMOS) device will be discussed and compared to the conventional LDMOS structure. Currently, the LDMOS devices are the preferred technology for base station amplifiers and in Power MOSFET switching applications[Baliga, B.Jayant (1988), Bose, Bimal. K (1992)]. The synopsys TCAD simulation results will shows an improvement in the breakdown capability, capacitance and gate charge reduction, and improved transfer curve characteristics as compared with a conventional LDMOS structure.
Keywords :
isolation technology; power MOSFET; radiofrequency amplifiers; technology CAD (electronics); LDMOS; RF base station amplifiers; gate charge reduction; power MOSFET switching applications; synopsys TCAD simulation; transfer curve characteristics; trench gate lateral double diffused MOSFET; Capacitance; Equations; IEEE Press; Integrated circuit technology; MOSFETs; Microwave technology; Radio frequency; Radiofrequency amplifiers; Threshold voltage; Voltage control;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158799
