DocumentCode
2436510
Title
Experimental determination parameter of adaptive model of the field transistor with barrier Schottky
Author
Radchenko, V.V.
Author_Institution
"Mitec" Com Ltd, Moscow, Russia
fYear
2003
fDate
8-12 Sept. 2003
Firstpage
223
Lastpage
225
Abstract
Considered in this paper are the peculiarities of experimental parameters definition for adaptive model of Schottky FET. This model is applied in MIC optimizer CAD and provides register of calculated and experimental volt-amps and volt-farad diagrams of the transistor. The model can be used for development of broadband power amplifiers with Schottky FETs.
Keywords
Schottky gate field effect transistors; circuit CAD; microwave field effect transistors; microwave integrated circuits; microwave power amplifiers; semiconductor device models; wideband amplifiers; MIC optimizer CAD; adaptive model; barrier Schottky FET; broadband power amplifier; field transistor; volt-amps diagram; volt-farad diagram; Equivalent circuits; FETs; Hidden Markov models; IEEE catalog; Organizing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-26-X
Type
conf
DOI
10.1109/CRMICO.2003.158803
Filename
1256488
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