A fully integrated SIS mixer for 75-110 GHz

Author

Kerr, A.R. ; Pan, S. ; Whiteley, S. ; Radparvar, M. ; Faris, S.

Author_Institution

Nat. Radio Astron. Obs., Charlottesville, VA, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

851

Abstract

A fully integrated, low-noise, SIS mixer for 75-110 GHz with no adjustable tuners is demonstrated. The unexpectedly large conversion loss of the mixers has not yet been explained. Simple coplanar topology is used. This eliminates the need for registering patterns on opposite sides of a wafer, and allows the use of a conveniently thick substrate (0.010 in) in the mixer. The design is readily integrable with other components, such as planar antennas or future superconducting IF processors. The design should be useful up to 300 GHz, and possibly to 600 GHz, with appropriate frequency scaling.<>

Keywords

mixers (circuits); solid-state microwave circuits; superconducting integrated circuits; superconducting junction devices; 75 to 110 GHz; EHF; MM-wave operation; conversion loss; coplanar topology; fully integrated SIS mixer; low-noise; millimetre wave type; superconductor-insulator-superconductor device; Circuit optimization; Dielectric substrates; Inductors; Millimeter wave technology; Niobium; Observatories; Radio astronomy; Space technology; Tuned circuits; Waveguide junctions;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99712

Filename

99712