Title :
Constrained codes for phase-change memories
Author :
Anxiao Jiang ; Bruck, J. ; Hao Li
Author_Institution :
Comput. Sci. & Eng. Dept., Texas A&M Univ., College Station, TX, USA
fDate :
Aug. 30 2010-Sept. 3 2010
Abstract :
Phase-change memories (PCMs) are an important emerging non-volatile memory technology that uses amorphous and crystalline cell states to store data. The cell states are switched using high temperatures. As the semi-stable states of PCM cells are sensitive to temperatures, scaling down cell sizes can bring significant challenges. We consider two potential thermal-based interference problems as the cell density approaches its limit, and study new constrained codes for them.
Keywords :
codes; phase change memories; amorphous cell states; cell density approaches; constrained codes; crystalline cell states; nonvolatile memory technology; phase-change memories; thermal-based interference problems; Crosstalk; Decoding; Encoding; Heating; Manganese; Phase change materials;
Conference_Titel :
Information Theory Workshop (ITW), 2010 IEEE
Conference_Location :
Dublin
Print_ISBN :
978-1-4244-8262-7
Electronic_ISBN :
978-1-4244-8263-4
DOI :
10.1109/CIG.2010.5592680
