Title :
On the switching performance of semiconductor devices in a cascode switch
Author :
Chan, T.K. ; Morcos, M.M.
Author_Institution :
Motorola Inc., Chandler, AZ, USA
Abstract :
The gate turn-off (GTO) thyristor has the highest voltage and current rating among the semiconductor power switches used extensively today. The insulated-gate bipolar transistor (IGBT) is used to improve switching performance of a GTO in a cascode switch. This paper documents the switching performance of the different power semiconductor devices used in an IGBT-gated GTO-cascode switch. The cascode switch was tested and simulated using SPICE. Experimental waveforms are presented and show good agreement with simulation results
Keywords :
SPICE; insulated gate bipolar transistors; power semiconductor switches; semiconductor device models; thyristor applications; IGBT; IGBT-gated GTO-cascode switch; SPICE simulation; cascode switch; current rating; gate turn-off thyristor; insulated-gate bipolar transistor; switching performance; voltage rating; Circuit simulation; Insulated gate bipolar transistors; Insulation; MOSFETs; Power semiconductor devices; Power semiconductor switches; SPICE; Semiconductor devices; Thyristors; Voltage;
Conference_Titel :
Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-3544-9
DOI :
10.1109/IAS.1996.559269
