On the switching performance of semiconductor devices in a cascode switch

Author

Chan, T.K. ; Morcos, M.M.

Author_Institution

Motorola Inc., Chandler, AZ, USA

Volume

3

fYear

1996

fDate

6-10 Oct 1996

Firstpage

1524

Abstract

The gate turn-off (GTO) thyristor has the highest voltage and current rating among the semiconductor power switches used extensively today. The insulated-gate bipolar transistor (IGBT) is used to improve switching performance of a GTO in a cascode switch. This paper documents the switching performance of the different power semiconductor devices used in an IGBT-gated GTO-cascode switch. The cascode switch was tested and simulated using SPICE. Experimental waveforms are presented and show good agreement with simulation results

Keywords

SPICE; insulated gate bipolar transistors; power semiconductor switches; semiconductor device models; thyristor applications; IGBT; IGBT-gated GTO-cascode switch; SPICE simulation; cascode switch; current rating; gate turn-off thyristor; insulated-gate bipolar transistor; switching performance; voltage rating; Circuit simulation; Insulated gate bipolar transistors; Insulation; MOSFETs; Power semiconductor devices; Power semiconductor switches; SPICE; Semiconductor devices; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE

Conference_Location

San Diego, CA

ISSN

0197-2618

Print_ISBN

0-7803-3544-9

Type

conf

DOI

10.1109/IAS.1996.559269

Filename

559269