DocumentCode
2436995
Title
A new index for gate oxide reliability characterization
Author
Lisenker, Boris
Author_Institution
Tower Semicond. Ltd., Migdal Haemek, Israel
fYear
1994
fDate
16-19 Oct 1994
Firstpage
118
Lastpage
123
Abstract
A new integral index (K-factor) for gate oxide (GOX) quality and reliability prediction is introduced. The physical meaning of this factor is that a charge leaking through a unit of volume of dielectric, induces a unit change in built-in electric field. The theoretical and experimental background together with examples of the K-factor application for comparing and characterization various gate oxides are presented and discussed. The advantages of this new technique, that should replace the QBD test, are demonstrated
Keywords
CMOS integrated circuits; MOSFET; dielectric thin films; electric breakdown; integrated circuit reliability; integrated circuit testing; life testing; CMOS devices; K-factor; SiO2; accelerated wafer level test; gate oxide reliability characterization; integral index; quality prediction; reliability prediction; Anodes; Degradation; Design for quality; Dielectrics; Electric breakdown; Electron traps; Monitoring; Stress; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop, 1994. Final Report., 1994 International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-1908-7
Type
conf
DOI
10.1109/IRWS.1994.515838
Filename
515838
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