A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

Author

Shibing Long ; Xiaojuan Lian ; Cagli, C. ; Perniola, L. ; Miranda, E. ; Ming Liu ; Sune, Jordi

Author_Institution

Lab. of Nanofabrication & Novel Device Integration, Inst. of Microelectron., Beijing, China

Volume

34

Issue

8

fYear

2013

fDate

Aug. 2013

Firstpage

999

Lastpage

1001

Abstract

The set voltage distribution of Pt/HfO₂/Pt resistive switching memory is shown to fit well a Weibull model with Weibull slope and scale factor increasing logarithmically with the resistance measured at the set point. Gaining inspiration from the percolation model of oxide breakdown, a physics-based model for the V_set statistics is proposed. The results of the model are completely consistent with the experimental results and demonstrate the need of a strong reset to get large Weibull slope that provides some relief to the strong requirements imposed by the set speed-read disturb dilemma.

Keywords

Weibull distribution; hafnium compounds; percolation; platinum; random-access storage; statistical analysis; Pt-HfO₂-Pt; RRAM; Weibull model; Weibull slope; oxide breakdown; percolation model; resistive switching memory; scale factor; set speed-read disturb dilemma; set statistics; voltage distribution; Resistive random access memory (RRAM); resistive switching; set voltage statistics;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2266332

Filename

6553216