Comparison of non-linear MESFET models

Author

Sijercic, Edin ; Pejcinovic, Branimir

Author_Institution

Dept. of Electr. & Comput. Eng., Portland State Univ., OR, USA

Volume

3

fYear

2002

fDate

2002

Firstpage

1187

Abstract

The objective of this paper is to investigate the non-linear performance of some of the most widely used GaAs MESFET models. DC, AC and intermodulation (IMD) measurements were carried out on 300 μm devices, and equivalent circuit parameters were extracted and optimized. Model predictions of IMD were investigated through several figures of merit: gain, IMD3, IMD5, compression points and intercept points. No clear cut "winner" among the models was observed, but Statz and Advanced Materka have the best overall performance.

Keywords

III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; intermodulation distortion; optimisation; semiconductor device measurement; semiconductor device models; 300 micron; AC measurements; DC measurements; GaAs; GaAs MESFET nonlinear models performance comparison; IMD model prediction; IMD3; IMD5; compression points; equivalent circuit parameter extraction; gain figure of merit; intercept points; intermodulation measurements; parameter optimization; Current measurement; Distortion measurement; Equivalent circuits; Gallium arsenide; Intrusion detection; MESFETs; Parasitic capacitance; Performance evaluation; Predictive models; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2002. 9th International Conference on

Print_ISBN

0-7803-7596-3

Type

conf

DOI

10.1109/ICECS.2002.1046465

Filename

1046465