Title :
Comparison of non-linear MESFET models
Author :
Sijercic, Edin ; Pejcinovic, Branimir
Author_Institution :
Dept. of Electr. & Comput. Eng., Portland State Univ., OR, USA
Abstract :
The objective of this paper is to investigate the non-linear performance of some of the most widely used GaAs MESFET models. DC, AC and intermodulation (IMD) measurements were carried out on 300 μm devices, and equivalent circuit parameters were extracted and optimized. Model predictions of IMD were investigated through several figures of merit: gain, IMD3, IMD5, compression points and intercept points. No clear cut "winner" among the models was observed, but Statz and Advanced Materka have the best overall performance.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; intermodulation distortion; optimisation; semiconductor device measurement; semiconductor device models; 300 micron; AC measurements; DC measurements; GaAs; GaAs MESFET nonlinear models performance comparison; IMD model prediction; IMD3; IMD5; compression points; equivalent circuit parameter extraction; gain figure of merit; intercept points; intermodulation measurements; parameter optimization; Current measurement; Distortion measurement; Equivalent circuits; Gallium arsenide; Intrusion detection; MESFETs; Parasitic capacitance; Performance evaluation; Predictive models; Voltage;
Conference_Titel :
Electronics, Circuits and Systems, 2002. 9th International Conference on
Print_ISBN :
0-7803-7596-3
DOI :
10.1109/ICECS.2002.1046465
