DocumentCode :
24382
Title :
CMOS Charge Pump With No Reversion Loss and Enhanced Drivability
Author :
Joung-Yeal Kim ; Su-Jin Park ; Kee-Won Kwon ; Bai-Sun Kong ; Joo-Sun Choi ; Young-Hyun Jun
Author_Institution :
Memory Div., Samsung .Electron., Hwasung, South Korea
Volume :
22
Issue :
6
fYear :
2014
fDate :
Jun-14
Firstpage :
1441
Lastpage :
1445
Abstract :
A CMOS charge pump adopting dual charge transfer switches and a transfer blocking technique is presented. Using these techniques, the proposed charge pump eliminates reversion loss and improves driving capability. A test chip is designed in a 46-nm CMOS process, whose evaluation results show that, with no loading current, the proposed CMOS charge pump achieves 9.1% improvement of voltage conversion ratio. They also show that the proposed charge pump provides up to 132% improvement on current driving capability, as compared with the conventional CMOS charge pumps.
Keywords :
CMOS integrated circuits; charge pump circuits; CMOS charge pump; dual charge transfer switches; enhanced drivability; size 46 nm; transfer blocking technique; voltage conversion ratio; Blocking technique; charge pump; voltage doubler; voltage generator; voltage generator.;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2013.2267214
Filename :
6553217
Link To Document :
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