Title :
Radiation effects on IGBT under γ irradiation
Author :
Lho, Young Hwan ; Lee, Sang Yong ; Kang, Phil-Hyun
Author_Institution :
Woosong Univ., Daejeon
Abstract :
A lot of analysis on IGBT (insulated gate bipolar transistor) irradiation has been carried out by researchers. IGBT in power system has been dominating MOS (metal oxide semiconductor) transistor since IGBTs guarantee better conduction and less expensive. The radiation induced characteristics of IGBT are mainly emphasized the threshold shifting due to the oxide charge trapping in MOS and the reduction of current gain in the bi-polar transistor being inherently composed in the IGBT structure. In this paper, the IGBT macro-model incorporating irradiation is implemented and analyzed the electrical characteristics by SPICE simulation tool. It is expected that the experimental data is evaluated and compared with the simulation model.
Keywords :
MOSFET; SPICE; gamma-ray effects; insulated gate bipolar transistors; IGBT; MOS; SPICE simulation; gamma irradiation; insulated gate bipolar transistor irradiation; metal oxide semiconductor transistor; oxide charge trapping; radiation effects; radiation induced characteristics; threshold shifting; Automatic control; Communication system control; Electric variables; Insulated gate bipolar transistors; Ionizing radiation; MOS devices; MOSFETs; Neutrons; Radiation effects; Threshold voltage; γ Irradiation; IGBT; MOS; bipolar transistor;
Conference_Titel :
Control, Automation and Systems, 2007. ICCAS '07. International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-89-950038-6-2
Electronic_ISBN :
978-89-950038-6-2
DOI :
10.1109/ICCAS.2007.4407029
