Radiation effects on IGBT under γ irradiation

Author

Lho, Young Hwan ; Lee, Sang Yong ; Kang, Phil-Hyun

Author_Institution

Woosong Univ., Daejeon

fYear

2007

fDate

17-20 Oct. 2007

Firstpage

893

Lastpage

896

Abstract

A lot of analysis on IGBT (insulated gate bipolar transistor) irradiation has been carried out by researchers. IGBT in power system has been dominating MOS (metal oxide semiconductor) transistor since IGBTs guarantee better conduction and less expensive. The radiation induced characteristics of IGBT are mainly emphasized the threshold shifting due to the oxide charge trapping in MOS and the reduction of current gain in the bi-polar transistor being inherently composed in the IGBT structure. In this paper, the IGBT macro-model incorporating irradiation is implemented and analyzed the electrical characteristics by SPICE simulation tool. It is expected that the experimental data is evaluated and compared with the simulation model.

Keywords

MOSFET; SPICE; gamma-ray effects; insulated gate bipolar transistors; IGBT; MOS; SPICE simulation; gamma irradiation; insulated gate bipolar transistor irradiation; metal oxide semiconductor transistor; oxide charge trapping; radiation effects; radiation induced characteristics; threshold shifting; Automatic control; Communication system control; Electric variables; Insulated gate bipolar transistors; Ionizing radiation; MOS devices; MOSFETs; Neutrons; Radiation effects; Threshold voltage; γ Irradiation; IGBT; MOS; bipolar transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Control, Automation and Systems, 2007. ICCAS '07. International Conference on

Conference_Location

Seoul

Print_ISBN

978-89-950038-6-2

Electronic_ISBN

978-89-950038-6-2

Type

conf

DOI

10.1109/ICCAS.2007.4407029

Filename

4407029