Title :
A Transient-Enhanced Capacitorless LDO Regulator with improved Error Amplifier
Author :
Alapati, Suresh ; SrihariRao, Patri ; Krishna Prasad, K.S.R. ; Dixit, Sudhaker
Author_Institution :
Dept. of Electron. & Commun., Nat. Inst. of Technol., Warangal, India
Abstract :
This paper presents a modified folded cascode error amplifier of low dropout (LDO) regulator and a slew-rate enhancement circuit to minimize compensation capacitance and improve transient response. The proposed error amplifier eliminates the tradeoffs between small and large slew-rate that is imposed by the tail-current in conventional error amplifier design. The design is implemented in a standard UMC 0.18 ìm standard CMOS process. Simulation results show that, the LDO regulator consumes a quiescent current of 49.64μA only with a total power consumption of .079mW. It regulates the output voltage at 1.4v from 1.6-1.8v supply. The overshoot/undershoot in the output voltage under the extreme load transients are 220.7mV/280.26mV for load current range of 0 to 100mA. The line regulation is 1.244mV/V at 1.8V, load regulation is 40.6mV/A. This circuit finds its beneficial behavior for chip-level power management units requiring high-area efficiency as compensation capacitors are avoided.
Keywords :
CMOS integrated circuits; amplifiers; capacitance; voltage regulators; chip-level power management; compensation capacitance; current 49.64 muA; error amplifier; extreme lo transients; line regulation; low dropout regulator; modified folded cascode error amplifier; output voltage; power 0.079 mW; power consumption; quiescent current; size 0.18 mum; slew-rate enhancement circuit; standard UMC standard CMOS process; transient response; transient-enhanced capacitorless LDO regulator; voltage 1.4 V to 1.8 V; Capacitance; Capacitors; Recycling; Regulators; Transient response; Transistors; Voltage control; High slew rate; low-dropout regulator; low-quiescent current; recycling folded cascode error amplifier;
Conference_Titel :
VLSI (ISVLSI), 2014 IEEE Computer Society Annual Symposium on
Conference_Location :
Tampa, FL
Print_ISBN :
978-1-4799-3763-9
DOI :
10.1109/ISVLSI.2014.28
