Title :
Relaxation equations and high-frequency GaAs conductivity
Author :
Moskalyuk, V.A. ; Kulikov, K.V.
Author_Institution :
Dept. of Electron., Nat. Tech. Univ. of Ukraine, Kyiv, Ukraine
Abstract :
A technique for analytically calculating high-frequency GaAs conductivity in low signal approximation is proposed. It is based on relaxation equations of concentration, pulse and energy conservation, as well as on the analysis of relaxation times for various kinds of scattering. A quantitative assessment of a limiting frequency for negative dynamic conductivity is shown.
Keywords :
III-V semiconductors; carrier relaxation time; electric admittance measurement; electrical conductivity; energy conservation; gallium arsenide; GaAs; energy conservation; high-frequency GaAs conductivity; low signal approximation; negative dynamic conductivity; relaxation time analysis; Biomedical electronics; Conductivity; Delay; Equations; Frequency; Gallium arsenide; IEEE catalog; Organizing; Scattering; Tellurium;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158908
