Title :
A numerical model based analysis of the design and operation of a GaInP/GaAs tandem monolithic solar cell
Author :
Schwartz, Richard J. ; Gray, Jeffery L.
Author_Institution :
Sch. of Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
This paper presents the results of the solar cell modeling program ADEPT used to model the GaInP/GaAs tunnel junction connected monolithic tandem solar cell reported by Bertness et al. at the First World Conference on Photovoltaic Energy Conversion (1994). This cell was selected for analysis because it is a particularly well designed and well characterized record setting cell. This paper examines the application of the numerical modeling program ADEPT to a III-V monolithic tandem cell under a variety of illumination conditions (AM0, AM1.5 and high concentration)
Keywords :
III-V semiconductors; digital simulation; electrical engineering computing; gallium arsenide; gallium compounds; indium compounds; solar cells; ADEPT; AM0 illumination; AM1.5 illumination; GaInP-GaAs; GaInP/GaAs tandem monolithic solar cell; GaInP/GaAs tunnel junction; III-V monolithic tandem cell; high concentration; numerical model based analysis; numerical modeling program; solar cell modeling program; Energy conversion; Gallium arsenide; Lighting; Numerical models; Photovoltaic cells; Photovoltaic systems; Power engineering and energy; Reflection; Semiconductor process modeling; Solar power generation;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654225
